Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base
Patent
1995-06-07
1998-05-19
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With pretreatment or preparation of a base
117108, 117109, 117990, C30B 2308
Patent
active
057530408
ABSTRACT:
In one form of the invention, a method for the growth of an epitaxial insulator-metal structure on a semiconductor surface comprising the steps of maintaining the semiconductor surface at a pressure below approximately 1.times.10.sup.-7 mbar, maintaining the semiconductor surface at a substantially fixed first temperature between approximately 25.degree. C. and 400.degree. C., depositing an epitaxial metal layer on the semiconductor surface, adjusting the semiconductor surface to a substantially fixed second temperature between approximately 25.degree. C. and 200.degree. C., starting a deposition of epitaxial CaF.sub.2 on the first metal layer, ramping the second temperature to a third substantially fixed temperature between 200.degree. C. and 500.degree. C. over a time period, maintaining the third temperature until the epitaxial CaF.sub.2 has deposited to a desired thickness, and stopping the deposition of epitaxial CaF.sub.2 on the first metal layer.
Other devices, systems and methods are also disclosed.
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Donaldson Richard L.
Kesterson James C.
Kunemund Robert
Skrehot Michael K.
Texas Instruments Incorporated
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