Method for the growing of heteroepitaxial layers

Details Method for the growing of heteroepitaxial layers Method for the growing of heteroepitaxial layers

1992-10-06

1994-10-18

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

437 83, 437 89, 437 90, H01L 2502

Patent

active

053565100

ABSTRACT:
A method according to which a layer of a semiconductor material is made on a substrate by growth in a confinement space defined by this substrate and by a confinement layer, this growth being achieved from a seed. The cross-section of the seed, substantially perpendicular to the general direction of growth, possesses a thick central part framed by two thinned lateral parts. The confinement space has the same cross-section as the seed.

REFERENCES:
patent: 4507158 (1985-03-01), Kamins et al.
patent: 4578142 (1986-03-01), Corboy, Jr. et al.
patent: 4615762 (1982-10-01), Jastrzebski et al.
patent: 4663831 (1987-05-01), Birrittella et al.
patent: 4786615 (1988-11-01), Liaw et al.
patent: 4923826 (1990-05-01), Jastrzebski et al.
patent: 5057452 (1991-10-01), Theunissen et al.

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