Method for the galvanic manufacture of metallic bump-like lead c

Coating processes – Electrical product produced – Condenser or capacitor

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357 67, 427 96, H01L 2160, H01L 21445

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046006001

ABSTRACT:
A method of galvanic manufacture of bump-like lead contacts of semiconductor components. The lead contacts are formed of etchable metals having a surface coating of gold. The gold is chemically deposited onto the lead contacts in a first and in a second work step. In the first work step, the deposition occurs to a thickness of 10 to 200 nm, and in the second work step to a thickness of 50 to 200 nm. Etching processes and a tempering occur between the two work steps. The surface layer applied in the first work step is employed during the etching processes as an etching mask for the lead contacts. This surface layer then diffuses into the lead contacts during the tempering. The solderablity of the lead contacts is thus preserved over a longer than usual time span (factor of 20).

REFERENCES:
patent: 3881884 (1975-05-01), Cook et al.
patent: 4005472 (1977-01-01), Harris et al.
patent: 4434434 (1984-02-01), Bhattacharya et al.
Ordonez IBM Tech. Disc. Bull. vol. 15, No. 4, Sep. 1972. p. 1088.
Japanese Application No. 55-8613 (Kenichi Ogawa) "Gold Bump Forming Method of Semiconductor Device" vol. 5, No. 179 (E-82) (851) Nov. 17, 1981.

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