Method for the formation of silicon oxide films

Details Method for the formation of silicon oxide films Method for the formation of silicon oxide films

1993-10-29

1994-12-06

Lusignan, Michael

Coating processes

Electrical product produced

Metallic compound coating

427226, 427377, 427387, 4273977, 437235, 437238, B05D 512

Patent

active

053709047

ABSTRACT:
Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250.degree. C. to 500.degree. C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached .ltoreq.80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane.

REFERENCES:
patent: 3615272 (1971-10-01), Collins et al.
patent: 5118530 (1992-06-01), Hanneman et al.
patent: 5145723 (1992-09-01), Ballance et al.
European Materials Research Society Monographs, vol. 5, 1992, pp. 77-84, V. Belot et al., "Thermal decomposition of hydrosilsesquioxane gels under agron".
Fujitsu-Scientific & Technical Journal, vol. 28, No. 3, Aug. 1992, pp. 385-392, S. Fukuyama et al., "Polysiloxane As An Interlevel Dielectric For VLSI Fabrication".
Journal Of The Electrochemical Society, vol. 137, No. 10, Oct. 1990, pp. 3223-3229, A. Oikawa et al., "Polysilphenylenesiloxane Resin As An Interlevel Dielectric For VLSI Multilevel Interconnections".

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