Method for the formation of polycrystalline silicon layers, and

Details Method for the formation of polycrystalline silicon layers, and Method for the formation of polycrystalline silicon layers, and

1980-09-16

1983-12-13

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

29571, 29584, C25D 1132

Patent

active

044203799

ABSTRACT:
A method for forming a self-aligned MOS power transistor. A layer of silicon nitride is deposited uniformly over a plate with limited oxide zones. The plate is then placed in an acid bath and subjected to a potential difference. Only the zones of the polycrystalline silicon layer which are over the silica zones remain.

REFERENCES:
patent: 3345274 (1967-10-01), Schmidt
patent: 3438873 (1969-04-01), Schmidt
patent: 3634204 (1972-01-01), Dhaka et al.
patent: 3764491 (1973-09-01), Schwartz

Affiliated with

Also associated with

Rating

Method for the formation of polycrystalline silicon layers, and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the formation of polycrystalline silicon layers, and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the formation of polycrystalline silicon layers, and will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-803548