Method for the formation of high temperature semiconductors

Details Method for the formation of high temperature semiconductors Method for the formation of high temperature semiconductors

1991-02-25

1993-12-14

Bell, Mark L.

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505733, 505739, 264 66, H01B 1206, H01L 3912

Patent

active

052702928

ABSTRACT:
Improved superconducting materials with high maximum magnetization, remanent magnetization and diamagnetic susceptibility can be made by enriching the base Y-Ba-Cu-O composition, Y:Ba:Cu=1:2:3, with respect to Y, or adding other trivalent or pentavalent elements (e.g. rare earths, Nb) to this composition. The mixed oxide materials are heated to melt a substantial fraction of their weight, quenched to a low temperature, re-heated to a temperature lower than the one initially used to effect melting, and annealed by slow cooling under air or oxygen.

REFERENCES:
patent: 4994437 (1991-02-01), Torii et al.
patent: 5011823 (1991-04-01), Jin et al.

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