Fishing – trapping – and vermin destroying
Patent
1994-03-30
1995-03-21
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 69, 437 72, 437 73, 148DIG50, H04L 2176
Patent
active
053995201
ABSTRACT:
There are disclosed methods for the formation of field oxide film in a semiconductor device. By the methods, a field oxide film which plays a role of insulation for the separation of device, is formed in a trench formed in a semiconductor substrate. In the methods, an oxide-nitride film is utilized as an oxidation protective film which prevents a pad oxide film and the side well of the trench from being oxidized. As a result, the bird's beak is reduced, which allows to secure the active region more large. In addition, the methods make the field oxide film smooth. Furthermore, increasing the threshold voltage of a field, the field oxide film is superior in punchthrough characteristics. Accordingly, the methods can be applied to fabricate highly integrated semiconductor devices.
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Dang Trung
Hearn Brian E.
Hyundai Electronics Industries Co,. Ltd.
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