Method for the formation of field oxide film in semiconductor de

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 69, 437 72, 437 73, 148DIG50, H04L 2176

Patent

active

053995201

ABSTRACT:
There are disclosed methods for the formation of field oxide film in a semiconductor device. By the methods, a field oxide film which plays a role of insulation for the separation of device, is formed in a trench formed in a semiconductor substrate. In the methods, an oxide-nitride film is utilized as an oxidation protective film which prevents a pad oxide film and the side well of the trench from being oxidized. As a result, the bird's beak is reduced, which allows to secure the active region more large. In addition, the methods make the field oxide film smooth. Furthermore, increasing the threshold voltage of a field, the field oxide film is superior in punchthrough characteristics. Accordingly, the methods can be applied to fabricate highly integrated semiconductor devices.

REFERENCES:
patent: 4363868 (1982-12-01), Takasaki et al.
patent: 4398992 (1983-08-01), Fang et al.
patent: 4561172 (1985-12-01), Slawinski et al.
patent: 4923563 (1990-05-01), Lee
patent: 5229318 (1993-07-01), Straboni et al.
patent: 5248350 (1993-09-01), Lee
patent: 5298451 (1994-03-01), Rao
Teng et al., "Optimization of Sidewall Masked Isolation Process", IEEE Journal of Solid-State Circuits, vol. 20, No. 1, Feb. 1985, pp. 44-51.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for the formation of field oxide film in semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the formation of field oxide film in semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the formation of field oxide film in semiconductor de will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1148774

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.