Method for the formation of buried gates of a semiconductor devi

Details Method for the formation of buried gates of a semiconductor devi Method for the formation of buried gates of a semiconductor devi

1983-07-06

1985-07-16

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 29580, 148175, 148188, 148191, 148DIG37, 148DIG39, 148DIG50, 148DIG88, 357 22, 357 56, 357 88, H01L 2120, H01L 2174

Patent

active

045287457

ABSTRACT:
A method for the formation of buried gates in a semiconductor device using epitaxial growing method combined with diffusion method or diffusion by an additional heat treatment. The buried gate has smaller gate resistance by providing relatively high impurity concentration and also having good reverse characteristic by providing relatively low impurity concentration at the top of the buried gates.

REFERENCES:
patent: 3753803 (1973-08-01), Nomura et al.
patent: 3969746 (1976-07-01), Kendall et al.
patent: 4115793 (1978-09-01), Nishizawa
patent: 4171995 (1979-10-01), Nishizawa et al.
patent: 4199771 (1980-04-01), Nishizawa et al.
patent: 4375124 (1983-03-01), Cogan
patent: 4434433 (1984-02-01), Nishizawa
patent: 4466173 (1984-08-01), Baliga

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