Method for the formation of a silicon oxide film

Details Method for the formation of a silicon oxide film Method for the formation of a silicon oxide film

1993-10-29

1994-12-13

Lusignan, Michael

Coating processes

Electrical product produced

Metallic compound coating

427226, 427377, 427379, 427387, 4273977, 437235, 437238, B05D 512

Patent

active

053728424

ABSTRACT:
Disclosed is a method for the formation of a thick silicon oxide film which is insoluble in organic solvents and free of cracks and pinholes on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate, converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating in an inert gas atmosphere, and converting the preceramic silicon oxide into silicon oxide ceramic by heating in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas.

REFERENCES:
patent: 4756977 (1988-09-01), Haluska et al.
patent: 5118530 (1992-06-01), Hanneman et al.
patent: 5145723 (1992-09-01), Ballance et al.

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