Method for the formation of a silicon oxide film

Details Method for the formation of a silicon oxide film Method for the formation of a silicon oxide film

1993-10-29

1994-12-06

Lusignan, Michael

Coating processes

Electrical product produced

Metallic compound coating

427226, 427377, 427387, 4273977, 437235, 437238, B05D 512

Patent

active

053709039

ABSTRACT:
Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate followed by converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in a mixed gas atmosphere of above 0 volume % up to 20 volume % oxygen and 80 volume % up to, but not including, 100 vol % inert gas until the content of silicon-bonded hydrogen in the silicon oxide product has reached .ltoreq.80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane resin.

REFERENCES:
patent: 3615272 (1971-10-01), Collins et al.
patent: 4756977 (1988-07-01), Halaska et al.
patent: 5118530 (1992-06-01), Henneman et al.
patent: 5145723 (1992-09-01), Ballance et al.
Gentle, `Oxidation of Hydrogen Silsesquioxane, (HS103/2)n, by Rapid Thermal Processing, Proceedings of the SPIE, vol. 1595, 1992.
H. Adachi et al., "New Spin-On Glass Materials Containing Polyphenyl-Silsesquioxane", Extended Abstracts, vol. 86-2, p. 858, no date.
V. Belot et al., `Thermal Decomposition of Hydrosilsesquioxane Gels Under Agron`, Eur. Materials Research Soc. Monographs, vol. 5, 77-84, no date.

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