Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-05-08
2007-05-08
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S296000, C438S435000, C438S637000
Reexamination Certificate
active
10909749
ABSTRACT:
A method for manufacturing insulating structures in a semiconductor substrate includes forming a first insulating layer on the semiconductor substrate, forming a stop layer on the first insulating layer, and forming a barrier layer on the stop layer. The barrier layer is selective with respect to the stop layer. A screen layer is formed on the barrier layer. A portion of the screen layer is selectively removed for forming an opening therethrough for exposing a portion of the barrier layer. The exposed barrier layer is removed for exposing a portion of the stop layer. The exposed stop layer is removed for exposing a portion of the semiconductor substrate. The method further includes removing the remaining barrier layer, and removing a portion of the exposed semiconductor substrate for forming a trench therein.
REFERENCES:
patent: 6265779 (2001-07-01), Grill et al.
patent: 6815333 (2004-11-01), Townsend et al.
patent: 6914004 (2005-07-01), Thompson
patent: 6964913 (2005-11-01), Dong et al.
Ciovacco Francesco
Colombo Roberto
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Luu Chuong Anh
STMicroelectronics S.r.l.
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