Method for the fabrication of isolation structures

Details Method for the fabrication of isolation structures Method for the fabrication of isolation structures

2007-05-08

2007-05-08

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S296000, C438S435000, C438S637000

Reexamination Certificate

active

10909749

ABSTRACT:
A method for manufacturing insulating structures in a semiconductor substrate includes forming a first insulating layer on the semiconductor substrate, forming a stop layer on the first insulating layer, and forming a barrier layer on the stop layer. The barrier layer is selective with respect to the stop layer. A screen layer is formed on the barrier layer. A portion of the screen layer is selectively removed for forming an opening therethrough for exposing a portion of the barrier layer. The exposed barrier layer is removed for exposing a portion of the stop layer. The exposed stop layer is removed for exposing a portion of the semiconductor substrate. The method further includes removing the remaining barrier layer, and removing a portion of the exposed semiconductor substrate for forming a trench therein.

REFERENCES:
patent: 6265779 (2001-07-01), Grill et al.
patent: 6815333 (2004-11-01), Townsend et al.
patent: 6914004 (2005-07-01), Thompson
patent: 6964913 (2005-11-01), Dong et al.

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