Method for the fabrication of DRAM cell having a trench in the f

Details Method for the fabrication of DRAM cell having a trench in the f Method for the fabrication of DRAM cell having a trench in the f

1994-07-27

1995-09-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054496365

ABSTRACT:
A method for the fabrication of DRAM cell is disclosed. The method is characterized by forming a trench in a field oxide in a transistor consisting of a field oxide, a gate insulating layer, a gate electrode capped with an insulating layer, a spacer insulating film and an impurity ion-implanted region connected with a capacitor. The trench formed in a field oxide effects an increase in a surface area of the charge storage electrode, resulting in an increased capacitance. Therefore, the method disclosed can overcome the limit of the conventional stacked capacitor which increases its surface area by heightening the charge storage electrode, maximizing charge storage capacitance. Consequently, the method can effect a high degree of integration in manufacturing a semiconductor device.

REFERENCES:
patent: 5185282 (1993-02-01), Lee et al.
patent: 5218219 (1993-06-01), Ajika et al.

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