Method for the fabrication of an alternation of layers of monocr

Details Method for the fabrication of an alternation of layers of monocr Method for the fabrication of an alternation of layers of monocr

1989-04-04

1990-08-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 90, 437915, 437 83, 148DIG164, H01L 2120

Patent

active

049525263

ABSTRACT:
A method for making a layer of monocrystalline, semiconducting material on a layer of insulating material is disclosed. For this, epitaxial growth is achieved in a cavity closed by layers of dielectric materials, using seeds of monocrystalline, semiconducting material of a substrate. This method thus enables a 3D integration of semiconductor components.

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