Method for the epitaxial growth of III-V compounds at homogeneou

Details Method for the epitaxial growth of III-V compounds at homogeneou Method for the epitaxial growth of III-V compounds at homogeneou

1977-03-04

1978-04-25

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156613, 156614, 252 623GA, H01L 21205, H01L 2920

Patent

active

040861090

ABSTRACT:
The invention relates to a method for the epitaxial growth from the gaseous phase of III-V-compounds at homogeneous and low temperature by varying the atmosphere specifically, by utilizing a neutral gas in the initial transport reaction and subsequently introducing hydrogen into the gaseous mixture in the immediate vicinity of the substrate. The temperature in the epitaxial space is homogeneous and low (600.degree. C) and the qualities of the deposited layers are considerably improved.

REFERENCES:
patent: 3145125 (1964-08-01), Lyons
patent: 3762945 (1973-10-01), DiLorenzo
patent: 3975218 (1976-08-01), Ruehrwein
Taylor, R. C., "Epitaxial Deposition of GaAs in an Argon Atmosphere", J. Electrochem. Soc., vol. 114, No. 4, Apr. 1967, pp. 410-412.
Seki et al.; "New Vapor Growth--Single Flat Temperature Zone", Japan, J. Appl. Phys., vol. 12, No. 7 (1973), pp. 1112-1113.

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