Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1978-10-13
1980-08-19
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148172, H01L 21208
Patent
active
042182697
ABSTRACT:
A method of manufacturing a semiconductor device having a monocrystalline substrate and a plurality of epitaxial layers successively deposited on the substrate is disclosed. The device is manufactured by successively contacting the substrate with solutions which are previously saturated by contact with a plurality of auxiliary substrates, in a process in which the monocrystalline substrate, the auxiliary substrates and the solutions are cooled before the layers are deposited. The method includes the steps of contacting a first auxiliary substrate with a first solution, contacting a second auxiliary substrate with this first solution while simultaneously contacting the first auxiliary substrate with a second solution, contacting the monocrystalline substrate with the first solution to deposit a first layer thereon while simultaneously contacting a second auxiliary substrate with the second solution, and then contacting the monocrystalline with the second solution to deposit a second layer thereon. The total contact time of each solution with the auxiliary substrates is not limited to the time of a single contact of the monocrystalline substrate with any solution. In this matter, the solubility times for the auxiliary substrates need not be limited to the epitaxial layer growth time of the monocrystalline substrate, thus resulting in an improved and more flexible manufacturing process.
REFERENCES:
patent: 3899371 (1975-08-01), Ladany et al.
patent: 3963536 (1976-06-01), Ettenberg et al.
patent: 4088514 (1978-05-01), Hara et al.
patent: 4137107 (1979-01-01), Nijman et al.
patent: 4149914 (1979-04-01), Weyrich et al.
Leswin Willem J.
Nijman Willem
Thijs Petrus J. A.
van Oirschot Theodorus G. J.
Biren Steven R.
Briody Thomas A.
Mayer Robert T.
Ozaki G.
U.S. Philips Corporation
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