Method for the epitaxial deposition of a semiconductor material

Details Method for the epitaxial deposition of a semiconductor material Method for the epitaxial deposition of a semiconductor material

1977-07-01

1979-01-09

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148172, 148173, 156602, 156605, 204 39, 204 61, H01L 21208, H01L 21368

Patent

active

041337050

ABSTRACT:
A method for the epitaxial deposition of a semiconductor by electrical polarization of a liquid phase at constant temperature.

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patent: 4012242 (1977-03-01), Matare
Lichtensteiger et al., "Modulation of Dopant . . . Crystal Growth," J. Electrochem. Soc., vol. 118, No. 6, 1971 (Jun.), pp. 1013-1014.
Kumagawa et al., "Current-Controlled Growth . . . Liquid Phase Epitaxy, " IBID, vol. 120, No. 4, Apr. 1973, pp. 583-584.

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