Method for the doping of supporting silicon plates for the manuf

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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118500, H01L 21223

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active

045252246

ABSTRACT:
A method for the locally selective doping of a planar substrate, essentially made of silicon, for the production of semiconductors using a diffusion process, in which aluminum as the doping additive is applied by vaporizing in a vacuum at temperatures above 500.degree. C. to the substrate surface areas to be doped and permitted to diffuse into the substrate. A part of the substrate surface is masked in order to prevent the doping of the substrate beneath the mask, by forming a SiO.sub.2 layer on the substrate and abutting a masking plate against the SiO.sub.2 layer.

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