Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1984-05-22
1985-06-25
Ozaki, George T.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
118500, H01L 21223
Patent
active
045252246
ABSTRACT:
A method for the locally selective doping of a planar substrate, essentially made of silicon, for the production of semiconductors using a diffusion process, in which aluminum as the doping additive is applied by vaporizing in a vacuum at temperatures above 500.degree. C. to the substrate surface areas to be doped and permitted to diffuse into the substrate. A part of the substrate surface is masked in order to prevent the doping of the substrate beneath the mask, by forming a SiO.sub.2 layer on the substrate and abutting a masking plate against the SiO.sub.2 layer.
REFERENCES:
patent: 3143444 (1964-08-01), Lowe et al.
patent: 3314833 (1967-04-01), Arndt et al.
patent: 3604694 (1971-09-01), Muller
patent: 3644154 (1972-02-01), Hoogendoorn et al.
patent: 3972838 (1976-08-01), Yamashita et al.
patent: 3997379 (1976-12-01), Rosnowski
patent: 4193826 (1980-03-01), Mochizuki et al.
patent: 4235650 (1980-11-01), Chang et al.
BBC Brown, Boveri & Cie
Ozaki George T.
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