Method for the determination of nitrogen concentration in compou

Details Method for the determination of nitrogen concentration in compou Method for the determination of nitrogen concentration in compou

1996-03-12

1998-03-24

Snay, Jeffrey

Chemistry: analytical and immunological testing

Nitrogen containing

436114, 436164, G01N 2159

Patent

active

057312095

ABSTRACT:
An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference .DELTA..alpha.(=.alpha..sub.N -.alpha.) in the absorption coefficient of light of a wavelength identical with the wavelength .lambda..sub.N due to the excitons under constraint in the isoelectronic trap between the semiconductors with (.alpha..sub.N) and without (.alpha.) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of .DELTA..alpha..

REFERENCES:
Lightowlers, E.C. et al. "Nitrogen Concentration in GaP Measured by Optical Absorption and by Proton-induced Nuclear Reactions" Journal of Applied Physics, vol. 45, No. 5 (May 1974) pp. 2191-2200.
Thierry-Mieg, V. et al. "Determination of the nitrogen doping of liquid phase epitaxy GaP and alloys by optical absorption and photoluminescence" J. Appl. Phys., vol. 54, No. 9 (Sep. 1983) pp. 5358-5362.
Riede, V. et al. "Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurments" Physica Status Solidi (a), vol. 89, No. 2, (Jun. 1985) pp. K147-K151.
Donecker, J. et al., Proceedings of the International Conference Radiative Recombination in III-V Compound Semiconductors, (1979) pp. 43-47.
Yu, R., Journal of Xiamen University Natural Science, (1992) pp. 152-155.
Lupal et al., "Determination of the Nitrogen Concentration in Epitaxial Layers of GAASP by the Optical Method", Inorganic Materials, vol. 22, No. 2, 1986, pp. 157-161.
Kloth et al., "Determination of the Nitrogen Concentration in VPE-GAASP", Physica Status Solidi A., vol. 100, No. 2, 1987, pp. 545-552.
Hansel et al., "Determination of Nitrogen Concentration in GAP Epitaxial Layers by Two Independent Methods", Kristall Und Technik, vol. 14, No. 8, 1979, pp. 977-984.
Thomas et al., "Isoelectronic Traps Due to Nitrogen in Gallium Phosphide", Physical Review, vol. 150, No. 2, 1966, pp. 680-689.

Affiliated with

Also associated with

Rating

Method for the determination of nitrogen concentration in compou does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for the determination of nitrogen concentration in compou, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the determination of nitrogen concentration in compou will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2288184