Method for the deposition of high quality silicon dioxide at low

Details Method for the deposition of high quality silicon dioxide at low Method for the deposition of high quality silicon dioxide at low

1988-01-20

1990-02-13

Childs, Sadie

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272553, C23C 1640

Patent

active

049005910

ABSTRACT:
The invention comprises a pyrolytic process for the deposition of high quality silicon dioxide at temperatures of 100.degree.-330.degree. C. Deposition is achieved by reacting silane and oxygen in the 2-12 torr pressure range, yielding deposition rates of 140 .ANG./min at 300.degree. C. and 50 .ANG./min at 120.degree. C. Measurements of refractive index (1.45-1.46), field strength (3-10.times.10.sup.6 V/cm), and resistivity (10.sup.13 -10.sup.15 -cm) indicate that the oxides are near stoichiometric SiO.sub.2. This technology appears promising the Group IV and Group III-V device applications.

REFERENCES:
patent: 3892891 (1975-07-01), Goodman et al.
patent: 4196232 (1980-04-01), Schnable
patent: 4223048 (1980-09-01), Engle
patent: 4232063 (1980-11-01), Rosler et al.
patent: 4239811 (1980-12-01), Kemlage
patent: 4252580 (1981-02-01), Messick
patent: 4339471 (1982-07-01), Kaganowicz et al.
patent: 4371587 (1983-02-01), Peters
patent: 4396437 (1983-08-01), Kwok et al.
patent: 4483725 (1984-11-01), Chang
patent: 4500388 (1985-02-01), Ohmura et al.
patent: 4547230 (1985-10-01), Hawrlyo
patent: 4624859 (1986-11-01), Akira et al.
patent: 4634605 (1987-01-01), Wiesmann
patent: 4686112 (1987-08-01), Hoffman

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