Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Patent
1992-12-22
1994-05-24
Chaudhuri, Olik
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
117931, 117939, C03B 2504
Patent
active
053145690
ABSTRACT:
A method of growth according to which a layer of a material having apertures is made on the surface of a substrate. A material is deposited in each aperture. When this material is liquid, it can absorb the material to be grown. Then, the growth is done in vapor phase. The material of the layer is chosen in such a way that there is neither growth nor nucleation on its surface during the growth in vapor phase. The disclosed method can be applied to the making of crystal whiskers positioned with precision, and to the making of tip type microcathodes.
REFERENCES:
patent: 3493431 (1970-02-01), Wagner
patent: 3549432 (1970-12-01), Sivertson
patent: 3580732 (1971-05-01), Blakeslee et al.
patent: 3721732 (1973-03-01), Knippenberg et al.
patent: 4058418 (1977-11-01), Lindmayer
patent: 4155781 (1979-05-01), Diepers
patent: 4549926 (1985-10-01), Corbay, Jr. et al.
Applied Physics Letters, vol. 4, No. 5, Mar. 1964, pp. 89-90, R. S. Wagner, et al., "Vapor-Liquid-Solid Mechanism of Single Crystal Growth".
IBM Technical Disclosure Bulletin, vol. 19, No. 10, Mar. 1977, one page, W. A. Thompson, "Preparing High Emission Cathodes".
Collet Christian
Leclerc Pierre
Legagneux Pierre
Pribat Didier
"Thomson-CSF"
Chaudhuri Olik
Garrett Felisa
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