Method for the bubble-free joining of a large-area semiconductor

Details Method for the bubble-free joining of a large-area semiconductor Method for the bubble-free joining of a large-area semiconductor

1985-11-15

1987-03-17

Godici, Nicholas P.

Metal fusion bonding

Process

Metal to nonmetal with separate metallic filler

228246, 228249, B23K 112, B23K 3512

Patent

active

046501070

ABSTRACT:
A large-area semiconductor component (1) is joined without bubbles by means of soldering to a substrate (2) by placing a perforated metallic intermediate layer (5) between the solder (3) before the soldering and the substrate (2) and the assembly is brought to soldering temperature under pressure and perpendicular to the soldering plane. During this process, the solder (4) completely fills the cavities between the components (1, 2) and (5) after the soldering and drives gas bubbles and any impurities to the periphery of the assembly, a constant distance being maintained between the semiconductor component (1) and the substrate (2). The intermediate layer (5) is preferably constructed as structured foil or as metallic fabric.

REFERENCES:
patent: 2961759 (1960-11-01), Weissfloch
patent: 3900153 (1975-08-01), Beerwerth et al.
patent: 4529836 (1985-07-01), Powers et al.

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