Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1978-05-10
1980-02-05
Smith, Alfred E.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
29578, 29579, 250272, G02B 2700
Patent
active
041874315
ABSTRACT:
In an illustrative embodiment marks with dual x-ray permeable apertures are at three spaced locations on the mask and transmit x-ray beams which are directed obliquely to the semiconductor surface. In this case, the marks on the semiconductor disc may be formed by monocrystals shaped in conformity with the incident beam cross section and located so as to produce reflected x-ray beams which intersect correspondingly shaped further apertures of the respective dual aperture marks on the mask. Alternatively the beams may impinge on the surface of the semiconductor disc itself at an angle to produce reflection, with x-ray absorbing material surrounding each reflecting region. In either case the reflected beams as transmitted by the further apertures are detected as a measure of the degree of parallelism of the mask and semiconductor disc.
REFERENCES:
patent: 3742229 (1973-06-01), Smith et al.
patent: 3928094 (1975-12-01), Angell
patent: 3984680 (1976-10-01), Smith
Spears et al., "X-Ray Lithography-A New High Resolution Replication Process", Solid State Technology, Jul. 1972 ,m p. 21-26.
Grigsby T. N.
Siemens Aktiengesellschaft
Smith Alfred E.
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