Method for texturing surfaces of silicon wafers

Details Method for texturing surfaces of silicon wafers Method for texturing surfaces of silicon wafers

2007-03-20

2007-03-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S745000, C438S021000, C438S003000, C216S013000, C216S083000, C216S087000, C216S096000, C216S099000, C257SE21219, C257SE21223

Reexamination Certificate

active

10555141

ABSTRACT:
A method for texturing surfaces of silicon wafers comprising the steps of dipping the silicon wafers in an etching solution of water, concentrated hydrofluoric acid and concentrated nitric acid and setting a temperature for the etching solution. The etching solution comprises, in percent, 20% to 55% water, 10% to 40% concentrated hydrofluoric acid and 20% to 60% concentrated nitric acid and the temperature of the etching solution is between 0 and 15 degrees Celsius.

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