Method for testing semiconductor thin gate oxide

Details Method for testing semiconductor thin gate oxide Method for testing semiconductor thin gate oxide

1996-10-24

2000-01-11

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324719, 438 17, G01R 3126

Patent

active

060140348

ABSTRACT:
A method for testing thin gate oxide integrity of a semiconductor device includes the steps of performing a current or voltage ramp test on the thin gate oxide semiconductor device. The resultant current and voltage data points indicating an increasing magnitude of current flowing through the thin gate oxide and corresponding increasing magnitude of voltage across the thin gate oxide are measured and recorded (14, 16). A slope is then computed between each successive pair of data points and stored (20). Each successive pair of computed slopes are then compared against a predetermined setpoint (22), where a possible kink point is detected if a pair of successive computed slopes has a difference greater than the predetermined setpoint (24).

REFERENCES:
patent: 5391502 (1995-02-01), Wei
patent: 5548224 (1996-08-01), Gabriel et al.
patent: 5723982 (1998-03-01), Yasue et al.
patent: 5793212 (1998-08-01), Om

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