Method for testing semiconductor integrated circuit device, volt

Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor

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324 731, G01R 3128

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active

053492900

ABSTRACT:
In a voltage drop power supply circuit for a semiconductor integrated circuit device, a first unit generates a constant internal power supply voltage from an external power supply voltage in accordance with a first characteristic line defining a relationship between the external power supply voltage and the internal power supply voltage, and applies the constant internal power supply voltage to internal circuits of the semiconductor integrated circuit device. A second unit generates a burn-in voltage from the external power supply voltage having a level higher than that used in the normal operation in accordance with a second characteristic line defining a relationship between the external power supply voltage and the internal power supply line, and applies the burn-in voltage to the internal circuits when a burn-in test is carried out for the semiconductor integrated circuit device. The second characteristic line crosses the first characteristic line at an intermediate point between lower and upper limit voltages defined by the first characteristic line. The burn-in voltage is greater than the internal power supply voltage used in the normal operation.

REFERENCES:
patent: 5030905 (1991-07-01), Figal
patent: 5083083 (1992-01-01), El-Ayat et al.
patent: 5097206 (1992-03-01), Perner
patent: 5111136 (1992-05-01), Kawashima

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