Method for testing semiconductor devices which measures internal

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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250310, G01R 31305

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active

059458330

ABSTRACT:
A method for testing a semiconductor device wherein an image produced from secondary electron emissions generated by exposing a cross section of the device to a beam of electrons with such device being in a first biased condition, preferably an unbiased condition, is digitally recorded in a memory of a digital computer. An image is produced from secondary electron emissions generated by exposing a cross section of the device to a scanning beam of electrons with such device being in a second biased condition is digitally recorded in the memory of the digital computer. The recorded images are digitally subtracted one from the other in the digital computer to produce a difference image. The digital computer digitally calculates a quantitative measure of voltage distribution across the exposed cross section from two regions in the difference image having different degrees of secondary electron emissions. The digital computer displays one of the digitally recorded images on a video display. The other one of the digitally recorded images is subsequently displayed on the video display and the identifiable regions of the two displayed images are identifiable on both displayed images.

REFERENCES:
patent: 4755748 (1988-07-01), Lin
patent: 4807159 (1989-02-01), Komatsu et al.
patent: 5521517 (1996-05-01), Shida et al.
patent: 5592100 (1997-01-01), Shida et al.
patent: 5640098 (1997-06-01), Niijima et al.
patent: 5659172 (1997-08-01), Wagner et al.
patent: 5703492 (1997-12-01), Nakamura et al.
PCT International Search Report PCT/US97/19739 Dated Apr. 27, 1998.
S. Mil'shtein, "Microelectronic Engineering--Beam Testing of the Electrical Field in Semiconductor Devices", Electrical Engineering Dept., Univ. of Mass., Mar. 1996.
S. Mil'shtein, et al., "Secondary Electrons Imaging of Metal-Semiconductor Field-Effect Transistor Operation", J. Vac. Sci. Technol. B 14(1), Jan./Feb. 1996.
S. Mil'shtein, et al., "Materials Science & Engineering B--Measurements of Interface Potentials in Quantum Wells", Electrical Engineering Dept., Univ. of Mass., Oct. 1995.

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