Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
2005-08-22
2008-07-08
Nguyen, Ha Tran (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
Reexamination Certificate
active
07397264
ABSTRACT:
Characteristics of a power MOSFET gate charge test waveform are evaluated to yield a highly reliable and uniform testing methodology that replaces the inconsistent and inefficient dv/dt immunity testing currently performed. The invention utilizes the ratio of QGDover QGS1to replace traditional dv/dt immunity testing in order to perform binning and sorting the devices. The ratio of QGDover QGS1has proven to be a very reliable substitute for standard dv/dt immunity tests, and a very accurate predictor of a power MOSFET's suitability for a specified purpose. Because the gate charge parameters are relatively easily measured with high accuracy, and independent of test set-up or tester, reliability is far greater than previous methods and improved efficient results. Additional ratios of charge parameters enhance the performance of the testing methodology of the present invention.
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Brian R. Pelly, “A New Gate Charge Factor Leads to Easy Drive Design for Power MOSFET Circuits”, International Rectifier, Application Note 944A, pp. 1549-1552.
Dolian Graphics, Inc.
Fulwider Patton LLP
Nguyen Ha Tran
Nguyen Tung X.
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