Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1991-11-22
1997-11-18
Niebling, John
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
437 8, C30B 1500
Patent
active
056883196
ABSTRACT:
The evaluation of the oxide film dielectric breakdown voltage of a silicon semiconductor single crystal is caried out by cutting a wafer out of the single crystal rod, etching the surface of the wafer with the mixed solution of hydrofluoric acid and nitric acid thereby relieving the wafer of strain, then etching the surface of the wafer with the mixed solution of K.sub.2 Cr.sub.2 O.sub.7, hydrofluoric acid, and water therby inducing occurrence of pits and scale-like patterns on the surface, determining the density of the scale-like patterns, and computing the oxide film dielectric breakdown voltage by making use of the correlating between the density of scale-like patterns and the oxide film dielectric breakdown voltage. This fact established the method of this invention to be capable of effecting an evaluation equivalent to the evaluation of the oxide film dielectric breakdown voltage of a PW wafer prepared from the single crystal rod.
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Ehara Y., et al., "Correlation Between Discharge Magnitude Distribution and Luminescence Distribution Due to Electrical Treeing", Conference on Electrical Insulation and Dielectric Phenomena, 31 Oct. 1990, pp. 313-318.
Fujimaki Nobuyoshi
Fusegawa Izumi
Karasawa Yukio
Yamagishi Hirotoshi
Booth Richard A.
Niebling John
Shin-Etsu Handotai & Co., Ltd.
Snider Ronald R.
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