Method for testing a semiconductor device by measuring quiescent

Details Method for testing a semiconductor device by measuring quiescent Method for testing a semiconductor device by measuring quiescent

1996-09-27

1998-04-21

Gutierrez, Diego F. F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324760, 324522, 324537, 437 8, 374 4, G01R 3126, G01N 2572

Patent

active

057421773

ABSTRACT:
A method for detecting defects in a semiconductor device using an IDDQ testing technique that is not dependent upon the background leakage current for defect resolution. One embodiment of the present invention utilizes the dependence of the background leakage current on temperature and/or voltage to zero out the background leakage in determining the defect current of a device.

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Charles F. Hawkins and Jerry M. Soden, Electrical Characteristics and Testing Considerations For gate Oxide Shorts In CMOS ICs, IEEE, Reprint from Proceedings International Test Conference 1995, pp. 313-324.

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