Method for tapered contact formation

Details Method for tapered contact formation Method for tapered contact formation

1995-10-19

1996-09-03

Fourson, George

Fishing, trapping, and vermin destroying

437231, 437981, 437982, H01L 2128

Patent

active

055523439

ABSTRACT:
This invention provides a method of forming a bowled contact or via hole in a boron and phosphorous doped tetraethyl orthosilicate, BPTEOS, dielectric film which will provide superior edge coverage when filled with metal. The bowled contact or via hole has an edge profile with a small entry angle, the angle between the surface of the dielectric film and the line tangent to the contact or via hole edge profile. The method of this invention uses a 10:1 Buffered Oxide Etch, BOE, to remove the densified region on the surface of the BPTEOS film. The contact or via hole is then formed using isotropic etching followed by a vertical anisotropic etch.

REFERENCES:
patent: 4902377 (1990-02-01), Berglund et al.
patent: 4983546 (1991-01-01), Hyun et al.
patent: 4986878 (1991-01-01), Malazgirt et al.
patent: 5164340 (1992-11-01), Chen et al.
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5399533 (1995-03-01), Promanik et al.

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