Method for taper etching metal

Details Method for taper etching metal Method for taper etching metal

1994-08-05

1995-11-07

Dang, Thi

Etching a substrate: processes

Adhesive or autogenous bonding of two or more...

Etching improves or promotes adherence of preforms being bonded

C23F 100

Patent

active

054645000

ABSTRACT:
A method for forming a tappered first metal wiring layer is described incorporating a substrate, a second metal layer formed as the upper layer on the first metal layer, a third metal layer having a diffusion coefficient lower than the diffusion coefficients of the above two metal layers formed between the first and the second metal layers, a resist pattern formed on the second metal layer, wherein the first metal layer is etched using the patterns of the second and the third metal layers and the resist pattern as etching masks to form a tapered cross-sectional pattern of the first metal wiring layer.

REFERENCES:
patent: 3700508 (1972-10-01), Keen, Jr.
patent: 3825454 (1974-07-01), Kikuchi et al.
patent: 4610502 (1986-09-01), Nicia et al.
patent: 5007984 (1991-04-01), Tsutsumi et al.
patent: 5118385 (1992-06-01), Kumar et al.

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