Method for tailoring the two-dimensional spatial gain distributi

Details Method for tailoring the two-dimensional spatial gain distributi Method for tailoring the two-dimensional spatial gain distributi

1987-11-23

1988-12-13

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

047916460

ABSTRACT:
A method of providing an optoelectronic device is disclosed in which the spatial gain profile within the device is tailored by a predetermined pattern of injecting and noninjecting contacts over the surface of the device with variation in the fractional surface coverage per unit area of injecting to noninjecting contact, thereby providing nearly arbitrary two-dimensional spatial gain profile within the optoelectronic device. A tailored gain broad area semiconductor laser fabricated by this method is capable of high power operation with very narrow, single lobed farfield patterns.

REFERENCES:
patent: 4594719 (1986-06-01), Ackley
C. P. Lindsey, E. Kapon, J. Katz, S. Margalit and A. Yariv, "Single Contact Tailored Gain Phased Array of Semiconductor Lasers," Appl. Phys. Lett. 45(7), Oct. 1, 1984, pp. 722-724.
D. E. Ackley, J. K. Butler and M. Ettenberg, "Phase-Locked Injection Laser Arrays with Variable Stripe Spacing," IEEE Journal of Quantum Electronics, vol. QE-22, No. 12, Dec. 1986, pp. 2204-2212.
D. E. Ackley, "Phase-Locked Injection Laser Arrays with Non-Uniform Stripe Spacing," Ninth IEEE International Semiconductor Laser Conference, Aug. 7-10, 1984, Rio de Janeiro, Brazil, pp. 88-89.

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