Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1990-02-09
1996-06-11
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 17, 117 18, 117 30, 117 33, C30B 1502
Patent
active
055245714
ABSTRACT:
Herein disclosed are apparatuses for manufacturing compound semiconductor polycrystals comprising a pressure vessel, an upper shaft, a container for a first component fixed to the upper shaft, a heater around the container, a lower shaft, a susceptor and a crucible for charging a second component, a heater for the crucible and a communicating pipe for spatially connecting the container and the crucible optionally provided with a porous member at the lower extremity and/or a cylindrical member for confining a space over a part of the melt surface contained in the crucible from the remaining inner space of the vessel, the apparatuses permitting the substantial reduction of the reaction time and an improvement of the yield of the polycrystals due to the presence of the porous member and/or the cylindrical member separating the inner space of the vessel into two portions.
REFERENCES:
patent: 3198606 (1965-08-01), Lyons
patent: 3642452 (1972-02-01), Roget et al.
patent: 3716345 (1973-02-01), Grabmaier
patent: 3791813 (1974-02-01), Ramachandran et al.
patent: 3799523 (1974-03-01), Brant et al.
patent: 4097329 (1978-07-01), Stock et al.
patent: 4118447 (1978-10-01), Richter
patent: 4478675 (1984-10-01), Akai
patent: 4750969 (1988-07-01), Sassa et al.
Chemical Abstracts vol. 90, No. 18, Apr. 1979, Abstract No. 144976d.
Freyhardt, editor, "Crystals", vol. 3 III-V Semiconductors, Sringer-Verlag, New York, 1980 pp. 54-55.
Farges, "A Method for the In-Situ Synthesis and Growth of Indium-Phosphide", Journal of Crystal Growth, 59(1982) pp. 665-668.
Kawasaki Akihisa
Kotani Toshihiro
Kunemund Robert
Sumitomo Electric Industries Ltd.
LandOfFree
Method for synthesizing compound semiconductor polycrystals and does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for synthesizing compound semiconductor polycrystals and , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for synthesizing compound semiconductor polycrystals and will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-346941