Method for synthesizing compound semiconductor polycrystals and

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

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117 17, 117 18, 117 30, 117 33, C30B 1502

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055245714

ABSTRACT:
Herein disclosed are apparatuses for manufacturing compound semiconductor polycrystals comprising a pressure vessel, an upper shaft, a container for a first component fixed to the upper shaft, a heater around the container, a lower shaft, a susceptor and a crucible for charging a second component, a heater for the crucible and a communicating pipe for spatially connecting the container and the crucible optionally provided with a porous member at the lower extremity and/or a cylindrical member for confining a space over a part of the melt surface contained in the crucible from the remaining inner space of the vessel, the apparatuses permitting the substantial reduction of the reaction time and an improvement of the yield of the polycrystals due to the presence of the porous member and/or the cylindrical member separating the inner space of the vessel into two portions.

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Freyhardt, editor, "Crystals", vol. 3 III-V Semiconductors, Sringer-Verlag, New York, 1980 pp. 54-55.
Farges, "A Method for the In-Situ Synthesis and Growth of Indium-Phosphide", Journal of Crystal Growth, 59(1982) pp. 665-668.

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