Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-07-22
2008-07-22
Dickey, Thomas (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21364, C438S393000, C438S394000, C438S395000
Reexamination Certificate
active
07402890
ABSTRACT:
A structure and associated method for forming a structure. The structure comprises a first doped region, a second doped region, a third doped region, and a first shallow trench isolation structure formed within a substrate. The first doped region comprises a first dopant having a first polarity. The second doped region forms a first electrode of a capacitor. The third doped region forms a second electrode of the capacitor. Each of the second doped region and the third doped region comprises a second dopant having a second polarity. The first shallow trench isolation structure is formed between the second doped region and the third doped region. The capacitor comprises a main capacitance. The structure comprises a first parasitic capacitance and a second parasitic capacitance. The first parasitic capacitance is about equal to the second parasitic capacitance.
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Collins David S.
Ding Hanyi
Feng Kai Di
He Zhong-Xiang
Liu Xuefeng
Dickey Thomas
International Business Machines - Corporation
Sabo William D.
Sandvik Ben P
Schmeiser, Olson & Watts
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