Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Liquid phase epitaxial growth
Patent
1996-08-23
1998-11-24
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Liquid phase epitaxial growth
117 63, 117902, C30B 3304
Patent
active
058401172
ABSTRACT:
A method for surface flattening a crystal substrate includes (a) processing a surface of a silicon single crystal substrate, the surface deviating by 0.1.degree. or less from the (001) plane, so as to form a processed zone thereon which is an obstacle to the movement of surface steps present on the surface of the silicon single crystal substrate and which is adjacent to a preselected region having a surface to be flattened when viewed on an atomic level; (b) holding the substrate processed in step (a) in a chamber having an adjustable degree of vacuum so that the substrate has a temperature which is controlled by direct-current passage and heating; and (c) heating the substrate to move the surface steps along the substrate from the preselected region and gather the surface steps in the processed zone, thereby forming a flat surface in the preselected region of the substrate when viewed on the atomic level. In one embodiment, the 0! directions, whereby the surface of the preselected region is flattened in all directions of the substrate surface.
REFERENCES:
patent: 5571748 (1996-11-01), Miyazawa et al.
M. Ichikawa et al, "Observation of electromigration effect upon Si-MBE growth on Si (001) surface", Vacuum/vol. 41/No. 4-6, pp. 933-937/1990.
N. Inoue et al, "In situ observation by ultrahigh vacuum reflection electron microscopy of terrace formation processes on (100) silicon surfaces during annealing", Appl. Phys. Lett. 55 (14), Oct. 2, 1989, pp. 1400-1402.
Tsunenori Sakamoto et al, "Si (001) -2X1 Single-Domain Structure Obtained by High Temperature Annealing", Japanese Journal of Applied Physics, vol. 25, No. 1, Jan. 1986, pp. L78-L80.
Naohisa Inoue et al, "UHV-REM Study of Changes in the Step Structures on Clean (100) Silicon Surfaces by Annealing", Japanese Journal of Applied Physics, vol. 26, No. 4, Apr. 1987, pp. L293-L295.
Ando Atsushi
Sakamoto Kunihiro
Agency of Industrial Science & Technology
Garrett Felisa
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