Method for suppressing pattern distortion associated with BPSG r

Details Method for suppressing pattern distortion associated with BPSG r Method for suppressing pattern distortion associated with BPSG r

1996-10-24

1999-10-26

Krynski, William

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257650, 257760, 428210, H01L 2358

Patent

active

059733853

ABSTRACT:
Significant amounts of pattern distortion were found to be the result of reflowing borophosphosilicate glass (BPSG) and silicon dioxide shrinkage during high temperature junction anneals. In order to remedy this problem, a method for suppressing the pattern distortion by subjecting the wafer coated with BPSG and with silicon dioxide layers to a high temperature anneal before patterning is disclosed. The high temperature anneal densifies the undoped silicon dioxide before patterning, so that shrinkage of the undoped silicon dioxide does not affect the patterning steps.

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