Method for suppressing boron penetration in PMOS with nitridized

Details Method for suppressing boron penetration in PMOS with nitridized Method for suppressing boron penetration in PMOS with nitridized

1995-06-14

1996-10-22

Thomas, Tom

Fishing, trapping, and vermin destroying

437 40, 437242, H01L 21265

Patent

active

055676383

ABSTRACT:
A method for suppressing boron penetration in a PMOS with a nitridized polysilicon gate includes steps of 1) growing a layer of gate oxide on a substrate, 2) forming at least one first polysilicon layer on the gate oxide layer, 3) nitridizing the first polysilicon layer, 4) forming a second polysilicon layer on the first polysilicon layer; and 5) implanting B-containing ions into the first and second polysilicon layers for constructing a PMOS structure wherein the nitridizing step suppresses a boron ion from penetration into the substrate. The present invention is characterized in nitridation on a polysilicon gate instead of a gate oxide which can effectively suppress boron penetration, avoid drawbacks resulting from nitridizing a gate oxide, and moreover, improve the reliability of the device owing to the slight nitridation effect in the polysilicon gate and the gate oxide.

REFERENCES:
patent: 4808261 (1989-02-01), Ghidini et al.
patent: 5104818 (1992-04-01), Silver
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5382533 (1995-01-01), Ahmad et al.
patent: 5422291 (1995-06-01), Clementi et al.
Lin et al., Nitridation of the Stacked Poly-Si Gate to Suppress the Boron Penetration in pMOS, pp. 248-249, .COPYRGT.Jun. 1995 IEEE.

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