Method for superficial annealing of semiconductor materials usin

Details Method for superficial annealing of semiconductor materials usin Method for superficial annealing of semiconductor materials usin

1982-09-24

1984-10-02

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 29576T, 219 1055A, 219 1055M, 427 39, H01L 21263, H05B 903

Patent

active

044746253

ABSTRACT:
The present invention relates to a method for superficial annealing of a semi-conductor wherein a sample of the semi-conductor material is placed inside a cavity resonator, and a microwave pulse is generated inside said resonator, the said pulse being long and strong enough to cause the superficial annealing and/or fusion of the sample and its subsequent re-crystallization.

REFERENCES:
patent: 4140887 (1979-02-01), Sutton et al.
patent: 4221948 (1980-09-01), Jean
patent: 4243744 (1981-01-01), Lockwood et al.
patent: 4303455 (1981-12-01), Splinter et al.
patent: 4307277 (1981-12-01), Maeda et al.
patent: 4323745 (1982-04-01), Berggren
patent: 4339648 (1982-07-01), Jean
Halbleiter--Technologie--Ed. Springer Verlog. Berlin, I. Ruge et al., 1975, pp. 54-57.

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