Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-02-27
1983-12-27
Saba, W. G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
156606, 156613, 357 16, 357 61, H01L 21365, H01L 2922
Patent
active
044228880
ABSTRACT:
A low-pressure, low-temperature organometallic chemical vapor deposition (OM-CVD) method for depositing a doped epitaxial layer of a II-VI compound, such as, n-ZnSe, on a substrate in the deposition zone of an OM-CVD reactor. For example, low-resistivity n-type ZnSe with p<0.05.OMEGA..cm and n>10.sup.17 cm.sup.-3 may be grown epitaxially on (100) GaAs substrates by this method using aluminum as a dopant from a triethylaluminum source. The as-grown layers show a strong near-bandgap photoluminescence peak. The much weaker photoluminescence intensity at longer wavelength indicates that the concentration of deep centers is lower than in doped ZnSe prepared by other prior art methods. Also, no further or post treatment (diffusion or annealing) after growth is necessary.
REFERENCES:
patent: 3173814 (1965-03-01), Law
patent: 3312571 (1967-04-01), Ruehrwein
patent: 3364084 (1968-01-01), Ruehrwein
patent: 3549434 (1970-12-01), Aven
patent: 3916510 (1975-11-01), Martin
"The Luminescence Center in Self-Activated ZnS Phosphors", J. S. Prener and D. J. Weil, Journal Of The Electrochemical Society, vol. 106, pp. 409-413 (May, 1959).
"The Use of Metal-Organics in the Preparation of Semiconductor Materials", H. M. Monasevit and W. I. Simpson, Journal of Electrochemical Society, vol. 118, No. 4, pp. 644-647 (Apr., 1971).
"Growth & Characterization of Undoped ZnSe Epitaxial Layers Obtained By Organometallic Chemical Vapour Deposition", P. Blanconnier et al., Thin Solid Films, vol. 55, pp. 375-386 (1978).
"Organometallic Vapor Deposition of Epitaxial ZnSe Films on GaAs Substrates", Wolfgang Stutius, Applied Physics Letters, vol. 33(7), pp. 656-658 (Oct. 1, 1978).
"Luminescence in Highly Conductive n-Type ZnSe", J. C. Bouley et al., Journal of Applied Physics, vol. 46(8), pp. 3549-3555 (Aug., 1975).
"High Conductivity ZnSe Films", Julio Aronovich et al., Journal of Applied Physics, vol. 49(4), pp. 2584-2585, (Apr., 1978).
"Physics & Chemistry of II-VI Compounds", edited by M. Aven and J. S. Prener and published and distributed by American Elsevier Publishing Co., Inc., pp. 596-609 (1967).
"Shallow Acceptors and P-type ZnSe", K. Kosai et al., Applied Physics Letters, vol. 35(2), pp. 194-196 (Jul. 15, 1979).
"Molecular Beam Epitaxial Growth of Low-Resistivity ZnSe Films", T. Yao et al., Applied Physics Letters, vol. 35(2), pp. 97-98 (Jul. 15, 1979).
"Photoluminescence and Heterojunction Properties of ZnS.sub.x Se.sub.1-x Epitaxial Layers on GaAs and Ge Grown By Organometallic CVD", Wolfgang Stutius, Journal of Electronic Materials, vol. 10(1), pp. 95-109, (Jan., 1981).
"Self-compensation-Limited Conductivity in Binary Semiconductors, III, Expected Correlations With Fundamental Parameters", G. Mandel, F. F. Morehead and P. R. Wagner, Physical Review, vol. 136(3A), pp. A826-A832 (Nov. 2, 1964).
"Pair Spectra and the Shallow Acceptors in ZnSe", J. L. Merz, K. Nassau, and J. W. Shiever, Physical Review, vol. B8(4), pp. 1444-1452 (Aug. 15, 1973).
"Phosphrous and Arsenic Impurity Centers in ZnSe. II, Optical and Electronic Properties", A. R. Reinberg, W. C. Holten, M. de Wit, and R. K. Watts, Physical Review, vol. B3(2), pp. 410-416 (Jan. 15, 1971).
"Properties of Al and P Ion-implanted Layers in ZeSe", Y. S. Park, B. K. Shin, D. L. Look and D. L. Downing in the book Ion Implantation in Semiconductors pp. 245-252, edited by S. Namba (Plenum Press, New York, 1975).
"N-Ion Implantation into ZnSe", C. H. Chung, H. W. Yoon, H. S. Kang and C. H. Tai in the book Ion Implantation in Semiconductors, pp. 253-259, edited by S. Namba (Plenum Press, New York 1975).
Carothers, Jr. W. Douglas
Saba W. G.
Xerox Corporation
LandOfFree
Method for successfully depositing doped II-VI epitaxial layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for successfully depositing doped II-VI epitaxial layers , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for successfully depositing doped II-VI epitaxial layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-946063