Method for structuring silicon carbide

Details Method for structuring silicon carbide Method for structuring silicon carbide

1987-02-04

1988-04-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG148, 156633, 156657, H01L 2142, H01L 21467

Patent

active

047359200

ABSTRACT:
A method for structuring silicon carbide by photolithography and plasma etching wherein a substrate of silicon carbide is covered on a flat side with a structured silicon layer, and the plasma etching is then carried out with a gaseous mixture of a halogenated hydrocarbon and oxygen, the oxygen being present in an amount of at least 40% and preferably 70 to 95% by volume.

REFERENCES:
patent: 3398033 (1968-08-01), Haga et al.
patent: 3510369 (1970-05-01), Ernick et al.
patent: 4595453 (1986-06-01), Yamazaki et al.
Kushner, J. Appl. Phys. 53 (4), Apr. 1982, pp. 2923-2938.
Munch et al, "Silicon Carbide Blue-Emitting Diodes Produced by Liquid-Phase Epitaxy", Solid State Electronics, vol. 121, (1978), pp. 1129-1132.
Chang et al, "Novel Passivation Dielectrics-The Boron or Phosphorous Doped Hydrogenated Amorphous Silicon Carbide Films", J. Electrochemical Society, Feb. 1985, pp. 418-422.

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