Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2003-06-16
2008-10-21
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S725000, C438S738000
Reexamination Certificate
active
07439186
ABSTRACT:
A method for structuring a silicon layer applies lacquer mask onto the silicon layer, and the silicon layer is selectively etched relative to the lacquer mask using an etching gas mixture comprising SF6, HBr and He/O2. The openings etched into the silicon layer with this method comprise especially steep sidewalls. Over and above this, the etching selectivity relative to a lacquer mask is clearly improved.
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Krönke Matthias
Lazar Laura
Infineon - Technologies AG
Nguyen Thanh
Schiff & Hardin LLP
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