Method for sputtering a PIN microcrystalline/amorphous silicon s

Details Method for sputtering a PIN microcrystalline/amorphous silicon s Method for sputtering a PIN microcrystalline/amorphous silicon s

1983-09-26

1985-04-02

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

136258, 357 2, 357 30, C23C 1500, H01L 3118

Patent

active

045086095

ABSTRACT:
A silicon PIN microcrystalline/amorphous silicon semiconductor device is constructed by the sputtering of N, and P layers of silicon from silicon doped targets and the I layer from an undoped target, and at least one semi-transparent ohmic electrode.

REFERENCES:
patent: 4417092 (1983-11-01), Moustakas et al.
M. J. Thompson et al., "R.F. Sputtered Amorphous Silicon Solar Cells", Proceedings, Int'l Photovoltaic Solar Energy Conf. (1977), Reidel Pub. Co. (Dordrecht), pp. 231-240 (Aug. 1978).
S. R. Das et al., "Dependence of the Microstructure of Amorphous Silicon Thin Films Prepared by Planar RF Magnetron Sputtering on Deposition Parameters", J. Appl. Phys., vol. 54, pp. 3101-3105 (1983).

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