Method for sputtering a PIN amorphous silicon semi-conductor dev

Details Method for sputtering a PIN amorphous silicon semi-conductor dev Method for sputtering a PIN amorphous silicon semi-conductor dev

1983-09-26

1985-07-09

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

136258, 136255, 357 2, 357 30, C23C 1500, H01L 3118

Patent

active

045280827

ABSTRACT:
A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure.

REFERENCES:
patent: 4270018 (1981-05-01), Gibbons
patent: 4417092 (1983-11-01), Moustakas et al.
E. Sabisky et al., "Amorphous Silicon Materials & Solar Cells: Progress & Directions", Conf. Record, 16th IEEE Photovoltaic Specialists Conf., (published 1983), pp. 1106-1110.
S. R. Das et al., J. Appl. Phys., vol. 54, pp. 3101-3105 (1983).

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