Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Patent
1992-11-17
2000-08-08
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
117 7, 117 9, 117929, 423446, C30B 2904
Patent
active
060996390
ABSTRACT:
A method for solid state formation of diamond includes providing a diamond growth substrate, such as single-crystal silicon, forming on the diamond growth substrate an alloy of carbon and a metal which permits carbon to exist in a matrix therein, and causing carbon atoms from the alloy to precipitate on the diamond growth substrate in a diamond cubic lattice. The alloy may be an alloy of aluminum and carbon. The alloy is annealed in a hydrogen ambient to cause diffusion of hydrogen through the alloy to the surface of the substrate, providing a high concentration of hydrogen at the interface between the substrate and the alloy. The alloy is heated to cause carbon atoms in the alloy to diffuse through the alloy to the interface and form diamond.
REFERENCES:
patent: 4997636 (1991-03-01), Prins
patent: 5221411 (1993-06-01), Narayan
Paul Denning & David Stevenson, Influence of Substrate Preparation Upon the Nucleation of Diamond Thin Films, in Russell Messier, et al., ed., New Diamond Science & Technology, at 403 (1990).
Low-Pressure Diamond Synthesis in Japan, T.R. Anthony, Second Annual Diamond Technology Initiative Seminar, Synopsis of Presentations (1987), at 169-226.
Russell Messier & Michael Frenklach, Mechanisms of Growth and Characterization of Diamond From Microwave Plasmas, Second Annual Diamond Technology Initiative Seminar (1987) 326.
B. Singh, et al., Deposition of Diamonds by Hollow Cathode and DC Plasma Assisted Low Pressure CVD, Second Annual Diamond Technology Initiative Seminar (1987) at 268.
D.W. Brenner, et al., Molecular-Dynamics Simulations of the Reaction of Atomic Hydrogen with Diamond Surfaces, in Messier, et al., eds., New Diamond Science and Technology (1991) at 39.
R. Ramesham, Selective Growth of Boron-Doped Polycrystalline Diamond Thin Films in Messier, et al., eds., New Diamond Science and Technology (1991) at 943.
S. A. Grot, et al., SemiConductor Device Development Using Selectively Grown Thin-Film Diamond, in Messier, et al., eds., New Diamond Science and Technology (1991), at 949.
W. A. Yarbrough, Thermodyanamic Issues in the Nucleation and Vapor Phase Growth of Diamond, in Messier, et al., eds., New Diamond Science and Technology (1991) at 291.
D.G.K. Jeng, et al., Light Induced Current Switching in Al/Diamond/Silicon Diodes, in Messier, et al., eds., New Diamond Science and Technology, at 963.
Stanford University Department of Materials Science and Engineering, Short Course on Diamond Films (Course Handout) (1989).
R. A. Flinn, & P.K. Trojan, Engineering Materials and Their Applications, 4th ed., pp. 196-201, (Date--Before Nov. 17, 1991).
Kunemund Robert
National Semiconductor Corporation
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