Method for sloping the profile of an opening in resist

Details Method for sloping the profile of an opening in resist Method for sloping the profile of an opening in resist

1988-12-27

1990-03-27

Michl, Paul R.

Radiation imagery chemistry: process, composition, or product th

Effecting frontal radiation modification during exposure,...

430 5, 430290, 430322, 430327, G02B 500

Patent

active

049120220

ABSTRACT:
A lithography method for forming an opening in a resist layer with a sloped profile is disclosed which requires no additional processing steps or equipment. A scattering element, for example a ground glass diffuser, is placed in the optical path of radiation passing through a standard lithography apparatus. The scattering element modifies the radiation passing through the lithography apparatus with the result that the developed resist profile exhibits sloped edges. The slope modification can be conveniently changed by exchanging the optical scattering element used.

REFERENCES:
patent: 4762396 (1988-08-01), Dumant et al.

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