Method for sloping insulative layer in bubble memory

Details Method for sloping insulative layer in bubble memory Method for sloping insulative layer in bubble memory

1981-04-13

1982-11-09

O'Keefe, Veronica

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, C23F 102

Patent

active

043583563

ABSTRACT:
A process is described for removing the rounded regions in a silicon dioxide layer particularly in a layer covering conductive members. The silicon dioxide layer is subjected to ion milling. The angle of incidence of the ions striking the rounded regions is greater than the angle of incidence in other regions of the layer. This causes more of the rounded regions to be removed, thereby providing a smoother, faceted surface. The process eliminates the need to taper the edges of the conductive members as done in the prior art.

REFERENCES:
patent: 4016062 (1977-05-01), Mehta et al.
patent: 4172758 (1979-10-01), Bailey et al.
patent: 4229248 (1980-10-01), Silverman et al.
patent: 4248688 (1981-02-01), Gartner et al.
Ion Implantation, Sputtering and Their Applications, P. D. Townsend et al., Academic Press, 1976, pp. 111-112.

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