Method for single crystal growth of perovskite oxides

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S003000, C117S004000, C117S007000, C117S008000, C117S009000

Reexamination Certificate

active

10845095

ABSTRACT:
An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

REFERENCES:
patent: 4339301 (1982-07-01), Matsuzawa et al.
patent: 4402787 (1983-09-01), Matsuzawa et al.
patent: 4519870 (1985-05-01), Matsuzawa et al.
patent: 4900393 (1990-02-01), Kugimiya et al.
patent: 5114528 (1992-05-01), Kou
patent: 5439876 (1995-08-01), Graf et al.
patent: 5541764 (1996-07-01), Zhu et al.
patent: 5611854 (1997-03-01), Veal et al.
patent: 5804907 (1998-09-01), Park et al.
patent: 5998910 (1999-12-01), Park et al.
patent: 6048394 (2000-04-01), Harmer et al.
patent: 6103072 (2000-08-01), Nishiwaki et al.
patent: 6355185 (2002-03-01), Kubota
patent: 6482259 (2002-11-01), Lee et al.
patent: 2002/0179000 (2002-12-01), Lee et al.
patent: 44-8557 (1969-04-01), None
patent: 44-20308 (1969-09-01), None
patent: 61-91091 (1986-05-01), None
patent: 61-146779 (1986-07-01), None
patent: 61-146780 (1986-07-01), None
patent: 63-35496 (1988-02-01), None
patent: 04-042855 (1992-02-01), None
patent: 04-300296 (1992-10-01), None
patent: 06-056595 (1994-03-01), None
patent: 09-263496 (1997-10-01), None
patent: 00143799 (1998-11-01), None
Yamamoto, Takahisa et al., “Fabrication of Barium Titanate Single Crystals by Solid-State Grain Growth”, Journal of the American Ceramic Society, vol. 77, No. 4, pp. 1107-1109, Apr. 1994.
Hennings, Phillips GMBH Forschungslab, Ber. Dtsch. Keram. Gesselsch., 55(7), pp. 359-360, 1978.
Kingery, et al, Introduction to Ceramics, 2ndEd. John Wiley & Sons, New York, pp. 452-455, 461-468, 1976.
Pfister, Siemens Zeitschrift, May 1955, Heft 6/6, pp. 199-205.
Schm,Elz, et al, Zent. Forsch. Entwickl., Siemens A.-G., Munich, Ceramic Forum International, 59(8-9), pp. 436-440, 1982.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for single crystal growth of perovskite oxides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for single crystal growth of perovskite oxides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for single crystal growth of perovskite oxides will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3781411

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.