Method for simultaneously fabricating bipolar and complementary

Details Method for simultaneously fabricating bipolar and complementary Method for simultaneously fabricating bipolar and complementary

1992-08-04

1995-04-18

Quach, T. N.

Fishing, trapping, and vermin destroying

437 56, 437162, 437239, 437985, H01L 21328, H01L 21336

Patent

active

054078407

ABSTRACT:
A process is disclosed for simultaneously fabricating bipolar and complementary field effect transistors. The process includes the fabrication of buried layers 18 doped with both phosphorus and arsenic to permit a shorter diffusion time while simultaneously providing buried layers having low resistance and high diffusivity. The process enables fabrication of BiCMOS structures using only six masks prior to the contact mask. The process also comprises oxidizing an epitaxial layer for forming a differential thickness oxide layer which is thicker over the source and drain regions, the collector contact and the emitter than over the base contact region.

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