Method for silicon carbide production by reacting silica with hy

Details Method for silicon carbide production by reacting silica with hy Method for silicon carbide production by reacting silica with hy

1993-01-21

1994-06-28

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 88, C01B 3136

Patent

active

053244940

ABSTRACT:
A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

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