Method for sharpening emitter sites using low temperature oxidat

Details Method for sharpening emitter sites using low temperature oxidat Method for sharpening emitter sites using low temperature oxidat

1997-08-08

1999-07-13

Bowers, Charles

Semiconductor device manufacturing: process

Electron emitter manufacture

445 50, 445 51, H01J 130

Patent

active

059239484

ABSTRACT:
An improved method for sharpening emitter sites for cold cathode field emission displays (FEDs) includes the steps of: forming a projection on a baseplate; growing an oxide layer on the projection using a low temperature oxidation process; and then stripping the oxide layer. Preferred low temperature oxidation processes include: wet bath anodic oxidation, plasma assisted oxidation and high pressure oxidation. These low temperature oxidation processes grow an oxide film using a consumptive process in which oxygen reacts with a material of the projection. This permits emitter sites to be fabricated with less distortion and grain boundary formation than emitter sites formed with thermal oxidation. As an example, emitter sites can be formed of amorphous silicon. In addition, low temperature materials such as glass can be used in fabricating baseplates without the introduction of high temperature softening and stress.

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